Room-temperature photodiodes based on InAs/InAs_0.88Sb_0.12/InAsSbP heterostructures for extended (1.5–4.8 μm) spectral range

Abstract

Photodiodes with a photosensitive area of 0.45 × 0.45 mm² operating at room temperature in a wavelength range bounded by 4.9 μm have been created on the basis of InAs/InAs_0.94Sb_0.06/InAsSbP/InAs_0.88Sb_0.12/InAsSbP/InAs heterostructures grown by liquid phase epitaxy. A distinguishing feature of the proposed photodiodes is extended (λ_max = 1.5–4.8 μm) spectral sensitivity range, in which the photodiode is characterized by a monochromatic responsivity of 0.5–0.8 A/W and a dark current density of 1.0–1.5 A/cm² at a reverse bias of 0.2 V. The differential resistance at zero bias reaches up to 20–100 Ω. The detection ability of photodiodes in the region of maximum sensitivity reaches (1–2) × 10⁸ cm Hz^1/2 W⁻¹.