Abstract
High-voltage diodes based on silicon carbide of 4H polytype (4H-SiC) have been studied by the deep-level transient spectroscopy (DLTS) method. It is established that the passage of forward current leads to the activation of a donor center with an activation energy of E c − 0.2 eV and an electron capture cross section of σ n ∼ 2.0 × 10−15 cm2. The DLTS measurements reveal the appearance of this center upon the transfer of a very small charge through the diode, under the conditions where the forward voltage drop on the diode remains almost unchanged. A possible nature of the observed phenomenon is discussed.
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Original Russian Text © A.M. Ivanov, M.E. Levinshtein, J.W. Palmour, A.K. Agarwal, M.K. Das, 2011, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2011, Vol. 37, No. 19, pp. 45–50.
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Ivanov, A.M., Levinshtein, M.E., Palmour, J.W. et al. Forward-current-generated donor centers in high-voltage 4H-SiC based p-i-n diodes. Tech. Phys. Lett. 37, 911–913 (2011). https://doi.org/10.1134/S1063785011100051
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DOI: https://doi.org/10.1134/S1063785011100051