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Triggering of superfast ionization fronts in silicon diode structures by field-enhanced thermionic electron emission from deep centers

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Abstract

The triggering and propagation of superfast impact ionization fronts in high-voltage silicon p +-n-n + diode structures have been numerically simulated. The results confirm the hypothesis that field-enhanced thermionic electron emission from deep centers can be a mechanism that is responsible for the generation of superfast ionization fronts.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    I. V. Grekhov & P. B. Rodin

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  1. I. V. Grekhov
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  2. P. B. Rodin
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Correspondence to P. B. Rodin.

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Original Russian Text © I.V. Grekhov, P.B. Rodin, 2011, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2011, Vol. 37, No. 18, pp. 17–25.

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Grekhov, I.V., Rodin, P.B. Triggering of superfast ionization fronts in silicon diode structures by field-enhanced thermionic electron emission from deep centers. Tech. Phys. Lett. 37, 849–853 (2011). https://doi.org/10.1134/S1063785011090203

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  • DOI: https://doi.org/10.1134/S1063785011090203

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