Skip to main content
SpringerLink
Log in

Specific features of technology of electron irradiation of large-area p-n silicon structures

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

We have studied the influence of irradiation by 4-MeV electrons via flat metal screens on the main electrical characteristics of high-power silicon diodes intended to operate at currents up to 600 A. The electron irradiation was performed via metal masks, which led to the formation of enhanced recombination zones (ERZs) in the base region of p +-n-n + silicon structures. It is shown that the local irradiation of a large-area diode structure improves (as compared to the total irradiation) the relationship been the reverse recovery time (t rr ) and energy loss in the conducting state (U f ), while decreasing the temperature sensitivity of the reverse current (I R ). It is established that the relationships between t rr , U F , and I R in locally irradiated structures depends on the experimental conditions (ERZ size).

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. P. Hazdra, J. Vobecky, H. Dorschner, and K. Brand, Microelectron. J. 35, 249 (2004).

    Article  Google Scholar 

  2. F. P. Korshunov, I. G. Marchenko, and N. E. Zhdano- vich, Izv. Akad. Nauk Belar., Ser. Fiz.-Mat. Navuk, No. 1, 117 (1997).

  3. V. N. Gubarev, A. M. Surma, A. V. Kovrov, and A. Yu. Semenov, Priklad. Fiz., No. 4, 85 (2001).

  4. V. A. Kozlov and V. V. Kozlovskii, Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 769 (2001) [Semiconductors 35, 735 (2001)].

    Google Scholar 

  5. P. Hazdra and J. Vobecky, Sol. St. Electron. 37, 127 (1994).

    Article  ADS  Google Scholar 

  6. B. Lax and T. J. Neustadter, J. Appl. Phys. 25, 1148 (1954).

    Article  ADS  Google Scholar 

  7. I. V. Grekhov, L. S. Kostina, and V. G. Sergeev, Fiz. Tekh. Poluprovodn. (Leningrad) 5, 1409 (1971) [Sov. Phys. Semicond. 5, No. 7 (1971)].

    Google Scholar 

  8. I. G. Marchenko and N. E. Zhdanovich, Pis’ma Zh. Tekh. Fiz. 36(10), 45 (2010)[Tech. Phys. Lett. 36, 464 (2010)].

    Google Scholar 

  9. E. A. Ladygin, M. P. Konovalov, M. N. Orlova, et al., Vopr. Atom. Nauki Tekhn., Ser.: Fiz. Rad. Vozd. Radioelektron. Apparat., No. 1–2, 29 (2006).

  10. A. N. Gorban’, V. V. Kravchina, D. M. Gomol’skii, and A. I. Solodovnik, Tekhnol. Konstr. Elektron. Apparat., No. 3, 36 (2008).

Download references

Author information

Authors and Affiliations

  1. Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, Minsk, 220072, Belarus

    I. G. Marchenko & N. E. Zhdanovich

Authors
  1. I. G. Marchenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. N. E. Zhdanovich
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to I. G. Marchenko.

Additional information

Original Russian Text © I.G. Marchenko, N.E. Zhdanovich, 2011, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2011, Vol. 37, No. 17, pp. 26–34.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Marchenko, I.G., Zhdanovich, N.E. Specific features of technology of electron irradiation of large-area p-n silicon structures. Tech. Phys. Lett. 37, 801–804 (2011). https://doi.org/10.1134/S1063785011090136

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063785011090136

Keywords

Search

Navigation