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Effect of natural aging on photoluminescence of porous silicon

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Abstract

The influence of natural aging on the intensity and position of the photoluminescence (PL) peak in n-type porous silicon (por-Si) has been studied. Changes in the phase composition and relative content of the amorphous and oxide phases in por-Si during aging were determined by simulating the spectra of Si L 2,3 ultrasoft X-ray emission based on the reference spectra of the corresponding phases.

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Authors and Affiliations

  1. Voronezh State University, Voronezh, 394006, Russia

    A. S. Len’shin, V. M. Kashkarov, S. Yu. Turishchev, M. S. Smirnov & E. P. Domashevskaya

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  1. A. S. Len’shin
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  2. V. M. Kashkarov
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  3. S. Yu. Turishchev
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  4. M. S. Smirnov
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  5. E. P. Domashevskaya
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Correspondence to V. M. Kashkarov.

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Original Russian Text © A.S. Len’shin, V.M. Kashkarov, S.Yu. Turishchev, M.S. Smirnov, E.P. Domashevskaya, 2011, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2011, Vol. 37, No. 17, pp. 1–8.

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Len’shin, A.S., Kashkarov, V.M., Turishchev, S.Y. et al. Effect of natural aging on photoluminescence of porous silicon. Tech. Phys. Lett. 37, 789–792 (2011). https://doi.org/10.1134/S1063785011090124

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  • DOI: https://doi.org/10.1134/S1063785011090124

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