Abstract
The distribution of impurities in multicrystalline silicon (mc-Si) blocks grown at various velocities from refined commercial silicon by the Stochbarger method have been studied. It is established that the growth velocity V strongly influences the distribution of impurities along the block height. Growth at V > 1 cm/h leads to the breakdown of a crystallization front and the trapping of impurities. The results are explained by the concentration supercooling that arises when the growth velocity is increased above the critical level for a given type of initial material. The optimum rate for the crystallization with simultaneous effective purification of a commercial silicon from impurities has been experimentally determined.
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Original Russian Text © A.I. Nepomnyashchikh, R.V. Presnyakov, I.A. Eliseev, Yu.V. Sokol’nikova, 2011, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2011, Vol. 37, No. 15, pp. 103–110.
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Nepomnyashchikh, A.I., Presnyakov, R.V., Eliseev, I.A. et al. Specific features of multicrystalline silicon growth from high-purity commercial silicon. Tech. Phys. Lett. 37, 739–742 (2011). https://doi.org/10.1134/S1063785011080128
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DOI: https://doi.org/10.1134/S1063785011080128