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Formation of silicon nanocrystals in SiN x film on PET substrates using femtosecond laser pulses


The formation of Si nanoclusters under the action of femtosecond laser pulses in a SiN x film containing excess silicon has been studied. The initial film was grown by plasmachemical deposition at 100°C on a PET substrate. The pulsed crystallization was effected by a Ti-sapphire laser operating at a wavelength of 800 nm and a pulse duration of about 50 fs. According to the Raman spectroscopy data, the pulsed laser annealing stimulated the accumulation of excess silicon in nanoclusters and their crystallization. The proposed approach can be used for the formation of semiconductor nanocrystals in dielectric films on various plastic (polymer) substrates.

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  1. 1.

    N.-M. Park, T.-S. Kim, and S.-J. Park, Appl. Phys. Lett. 78, 2575 (2001).

    ADS  Article  Google Scholar 

  2. 2.

    T. T. Korchagina, D. V. Marin, V. A. Volodin, A. A. Popov, and M. Vergnat, Fiz. Tekh. Poluprovodn. (St. Petersburg) 43, 1557 (2009) [Semiconductors 43, 1514 (2009)].

    Google Scholar 

  3. 3.

    T.-Y. Kim, N.-M. Park, K.-H. Kim, G.-Y. Sung, Y.-W. Ok, T.-Y. Seong, and C.-J. Choi, Appl. Phys. Lett. 85, 5355 (2004).

    ADS  Article  Google Scholar 

  4. 4.

    V. A. Gritsenko, I. E. Tyschenko, V. P. Popov, and T. V. Perevalov, Dielektrics in Nanoelectronics (Izd-vo SO RAN, Novosibirsk, 2010) [in Russian].

    Google Scholar 

  5. 5.

    M. Molinari, H. Rinnert, and M. Vergnat, Europhys. Lett. 66, 674 (2004).

    ADS  Article  Google Scholar 

  6. 6.

    G. Scardera, T. Puzzer, G. Conibeer, and M. A. Green, J. Appl. Phys. 104, 104 310 (2008).

    Article  Google Scholar 

  7. 7.

    V. A. Gritsenko, Usp. Fiz. Nauk 178, 727 (2008) [Phys. Usp. 51, 723 (2008)].

    Article  Google Scholar 

  8. 8.

    M. Ohmukai, Y. Takigava, and K. Kurosawa, Appl. Phys. 83, 3556 (1998).

    Article  Google Scholar 

  9. 9.

    V. A. Volodin, M. D. Efremov, V. A. Gritsenko, and S. A. Kochubei, Appl. Phys. Lett. 73, 1212 (1998).

    ADS  Article  Google Scholar 

  10. 10.

    T. T. Korchagina, V. A. Volodin, A. A. Popov, and B. N. Chichkov, Vestn. Novosib. Gos.Univ., Ser. Fiz. 4(2), 47 (2009).

    Google Scholar 

  11. 11.

    US Patent No. 0178794 A1 of 31.07.2008 (Appl. No. 11/698262 of 25.01.2007).

  12. 12.

    V. A. Volodin, T. T. Korchagina, J. Koch, and B. N. Chichkov, Physica E 42, 1820 (2010).

    ADS  Article  Google Scholar 

  13. 13.

    T. T. Korchagina, V. A. Volodin, and B. N. Chichkov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 44, 1660 (2010) [Semiconductors 44, 1611 (2010)].

    Google Scholar 

  14. 14.

    V. A. Volodin and T. T. Korchagina, RF Patent no. 2391742 (Patent Appl. No 2009104889, priority of 12.02.2009).

  15. 15.

    D. V. Marin, V. A. Volodin, E. B. Gorokhov, D. V. Shcheglov, A. V. Latyshev, M. Vergnat, J. Koch, and B. N. Chichkov, Pis’ma Zh. Tekh. Fiz. 36(9), 102 (2010) [Tech. Phys. Lett. 36, 439 (2010)].

    Google Scholar 

  16. 16.

    M. D. Efremov, V. A. Volodin, L. I. Fedina, A. K. Gutakovskii, D. V. Marin, S. A. Kochubei, A. A. Popov, Yu. A. Minakov, and V. N. Ulasyuk, Pis’ma Zh. Tekh. Fiz. 29(13), 89 (2003) [Tech. Phys. Lett. 29, 569 (2003)].

    Google Scholar 

  17. 17.

    V. A. Volodin, M. D. Efremov, G. A. Kachurin, A. G. Cherkov, M. Deutschmann, and N. Baersch, Pis’ma Zh. Eksp. Teor. Fiz. 86, 128 (2007) [JETP Lett. 86, 191 (2007)].

    Google Scholar 

  18. 18.

    Z. Iqbal, S. Veptek, A. P. Webb, and P. Capezzuto, Solid State Commun. 37, 993 (1981).

    ADS  Article  Google Scholar 

  19. 19.

    S. V. Gaisler, O. I. Semenova, R. G. Sharafutdinov, and B. A. Kolesov, Fiz. Tverd. Tela (St. Petersburg) 46, 1484 (2004) [Phys. Solid State 46, 1528 (2004)].

    Google Scholar 

  20. 20.

    J. Bok, Phys. Lett. A 84, 448 (1981).

    ADS  Article  Google Scholar 

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Correspondence to V. A. Volodin.

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Original Russian Text © T.T. Korchagina, V.A. Volodin, A.A. Popov, K.S. Khor’kov, M.N. Gerke, 2011, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2011, Vol. 37, No. 13, pp. 62–69.

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Korchagina, T.T., Volodin, V.A., Popov, A.A. et al. Formation of silicon nanocrystals in SiN x film on PET substrates using femtosecond laser pulses. Tech. Phys. Lett. 37, 622 (2011).

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  • Technical Physic Letter
  • Dielectric Film
  • Silicon Nanocrystals
  • Silicon Cluster
  • Monosi Lane