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Infrared focal plane assemblies based on HgCdTe/Si(310) heterostructure

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Abstract

It is demonstrated for the first time that high-performance scanning infrared (IR) focal plane assemblies of the 288 × 4 format for long-wavelength (8–12 μm) IR spectral range can be created based on a Cd x Hg1 − x Te/Si(310) heterostructure.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    M. V. Yakushev, V. S. Varavin, V. V. Vasil’ev, S. A. Dvoretsky, A. V. Predein, I. V. Sabinina, Yu. G. Sidorov, A. V. Sorochkin & A. O. Suslyakov

Authors
  1. M. V. Yakushev
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  2. V. S. Varavin
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  3. V. V. Vasil’ev
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  4. S. A. Dvoretsky
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  5. A. V. Predein
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  6. I. V. Sabinina
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  7. Yu. G. Sidorov
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  8. A. V. Sorochkin
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  9. A. O. Suslyakov
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Corresponding author

Correspondence to M. V. Yakushev.

Additional information

Original Russian Text © M.V. Yakushev, V.S. Varavin, V.V. Vasil’ev, S.A. Dvoretsky, A.V. Predein, I.V. Sabinina, Yu.G. Sidorov, A.V. Sorochkin, A.O. Suslyakov, 2011, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2011, Vol. 37, No. 4, pp. 11–7.

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Yakushev, M.V., Varavin, V.S., Vasil’ev, V.V. et al. Infrared focal plane assemblies based on HgCdTe/Si(310) heterostructure. Tech. Phys. Lett. 37, 148–150 (2011). https://doi.org/10.1134/S1063785011020301

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  • DOI: https://doi.org/10.1134/S1063785011020301

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