A method of cobalt disilicide (CoSi2) layer formation proceeding from a Ti(8 nm)/Co(10 nm)/Ti(5 nm)/Si(100) (substrate) structure prepared by magnetron sputtering is described. The initial structure was subjected to two-stage rapid thermal annealing (RTA) in nitrogen, and the samples after each stage were studied by the time-of-flight secondary-ion mass spectrometry, Auger electron spectroscopy, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The RTA-1 stage (550°C, 45 s) resulted in the formation of a sacrificial surface layer of TiN x O y , which gettered residual impurities (O, C, N) from inner interfaces of the initial structure. After the chemical removal of this TiN x O y layer, the enrichment with cobalt at the RTA-2 stage (830°C, 25 s) led to the formation of a low-resistance CoSi2 phase.
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Original Russian Text © V.I. Rudakov, Yu.I. Denisenko, V.V. Naumov, S.G. Simakin, 2011, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2011, Vol. 37, No. 3, pp. 36–44.
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Rudakov, V.I., Denisenko, Y.I., Naumov, V.V. et al. Features of CoSi2 phase formation by two-stage rapid thermal annealing of Ti/Co/Ti/Si(100) structures. Tech. Phys. Lett. 37, 112–115 (2011). https://doi.org/10.1134/S106378501102012X
- Technical Physic Letter
- Rapid Thermal Annealing
- Depth Concentration Profile
- Temperature Rapid Thermal Annealing
- CoSi2 Phase