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High growth rate of AlN in a planetary MOVPE reactor

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Abstract

AlN growth in a low-scale production AIX2000HT MOVPE system was studied. The dependence of the growth rate on ammonia flow was shown to be of a threshold nature originating from gas-phase parasitic reactions. An AlN growth rate up to 8.6 μm/h under optimized reactor conditions was demonstrated.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, P. N. Brunkov, E. E. Zavarin & A. F. Tsatsulnikov

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  1. W. V. Lundin
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  2. A. E. Nikolaev
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  3. A. V. Sakharov
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  4. P. N. Brunkov
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  5. E. E. Zavarin
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  6. A. F. Tsatsulnikov
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Corresponding author

Correspondence to W. V. Lundin.

Additional information

Original Russian Text © W.V. Lundin, A.E. Nikolaev, A.V. Sakharov, P.N. Brunkov, E.E. Zavarin, A.F. Tsatsulnikov, 2010, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2010, Vol. 36, No. 24, pp. 33–39.

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Lundin, W.V., Nikolaev, A.E., Sakharov, A.V. et al. High growth rate of AlN in a planetary MOVPE reactor. Tech. Phys. Lett. 36, 1133–1135 (2010). https://doi.org/10.1134/S1063785010120205

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  • DOI: https://doi.org/10.1134/S1063785010120205

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