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Technical Physics Letters

, Volume 36, Issue 10, pp 929–932 | Cite as

On the degree of blocking of the surface recombination of photogenerated carriers in semiconductors by the subsurface variband layer

  • V. A. Kholodnov
Article
  • 28 Downloads

Abstract

A mathematically correct description of the model of carrier photogeneration by low-intensity radiation in surface-variband (graded-gap) semiconductors with a stepwise profile of the variband field at the boundary with the homogeneous region is proposed. A condition for the blocking of the surface recombination of photogenerated carriers by the variband layer is explicitly formulated.

Keywords

Technical Physic Letter Homogeneous Region Photogenerated Carrier Jumplike Change Quasi Neutrality 
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Copyright information

© Pleiades Publishing, Ltd. 2010

Authors and Affiliations

  1. 1.Institute of Radio Engineering and ElectronicsRussian Academy of SciencesMoscowRussia

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