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Morphology of porous silicon under long anodic etching in electrolyte with internal current source

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Abstract

The results of electron microscopy investigation of morphology of porous silicon (PS) received under long anodic etching by using internal current source in electrolytes such as HF:H2O2:H2C5OH and HF:H2O2 are presented. Mosaic structure of nanoporous silicon is observed as the islands separated by silicon ledges. It was shown that these islands are presented as assemble of oxidized nanocrystallites and silicon ledges. The results of elemental analysis of islands of oxidized nanocrystallites and silicon ledges are presented.

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Authors and Affiliations

  1. Institute of Physics and Technology, Almaty, Kazakhstan

    K. B. Tynyshtykbaev, Yu. A. Ryabikin, S. Zh. Tokmoldin, T. Aitmukan, B. A. Rakhymetov & R. B. Vermenichev

  2. Kazakh National Technical University, Almaty, Kazakhstan

    K. B. Tynyshtykbaev, Yu. A. Ryabikin, S. Zh. Tokmoldin, T. Aitmukan, B. A. Rakhymetov & R. B. Vermenichev

Authors
  1. K. B. Tynyshtykbaev
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  2. Yu. A. Ryabikin
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  3. S. Zh. Tokmoldin
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  4. T. Aitmukan
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  5. B. A. Rakhymetov
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  6. R. B. Vermenichev
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Correspondence to K. B. Tynyshtykbaev.

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Original Russian Text © K.B. Tynyshtykbaev, Yu.A. Ryabikin, S.Zh. Tokmoldin, T. Aitmukan, B.A. Rakhymetov, R.B. Vermenichev, 2010, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2010, Vol. 36, No. 11, pp. 104–110.

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Tynyshtykbaev, K.B., Ryabikin, Y.A., Tokmoldin, S.Z. et al. Morphology of porous silicon under long anodic etching in electrolyte with internal current source. Tech. Phys. Lett. 36, 538–540 (2010). https://doi.org/10.1134/S1063785010060155

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  • DOI: https://doi.org/10.1134/S1063785010060155

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