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Microchannel avalanche photodiode with broad linearity range

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Abstract

Design and operation principles of a new microchannel avalanche photodiode with an avalanche multiplication coefficient of up to 105 and a linearity range expanded by an order of magnitude compared to the existing analogs are described. A distinctive feature of the new device design is that the forward-biased p_n junctions (playing the role of individual quenching resistors) are situated under each pixel. This circumstance ensures an increase in the density of multiplication channels up to 40000 mm-2 at a 100% sensitive device area.

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Authors and Affiliations

  1. Joint Institute for Nuclear Research (JINR), Dubna, Moscow oblast, 141980, Russia

    Z. Sadygov, A. Ol’shevskii, N. Anfimov, T. Bokova, A. Dovlatov, V. Zhezher, Z. Krumshtein, R. Mekhtieva, R. Mukhtarov, M. Troitskaya, V. Chalyshev, I. Chirikov-Zorin & V. Shukurova

  2. Institute of Physics, National Academy of Sciences of Azerbaijan, Baku, Azerbaijan

    Z. Sadygov, A. Ol’shevskii, N. Anfimov, T. Bokova, A. Dovlatov, V. Zhezher, Z. Krumshtein, R. Mekhtieva, R. Mukhtarov, M. Troitskaya, V. Chalyshev, I. Chirikov-Zorin & V. Shukurova

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  1. Z. Sadygov
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  2. A. Ol’shevskii
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  3. N. Anfimov
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  4. T. Bokova
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  5. A. Dovlatov
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  6. V. Zhezher
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  7. Z. Krumshtein
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  8. R. Mekhtieva
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  9. R. Mukhtarov
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  10. M. Troitskaya
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  11. V. Chalyshev
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  12. I. Chirikov-Zorin
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  13. V. Shukurova
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Corresponding author

Correspondence to Z. Sadygov.

Additional information

Original Russian Text © Z. Sadygov, A. Ol’shevskii, N. Anfimov, T. Bokova, A. Dovlatov, V. Zhezher, Z. Krumshtein, R. Mekhtieva, R. Mukhtarov, M. Troitskaya, V. Chalyshev, I. Chirikov-Zorin, V. Shukurova, 2010, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2010, Vol. 36, No. 11, pp. 83–89.

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Sadygov, Z., Ol’shevskii, A., Anfimov, N. et al. Microchannel avalanche photodiode with broad linearity range. Tech. Phys. Lett. 36, 528–530 (2010). https://doi.org/10.1134/S106378501006012X

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  • DOI: https://doi.org/10.1134/S106378501006012X

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