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Effect of electron irradiation attenuated by aluminum screens on the electrical parameters of p-n silicon structures

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Abstract

We have studied the influence of irradiation by 6-MeV electrons via flat aluminum screens with thicknesses d = 2−14 mm (mass thicknesses, 0.5–3.8 g/cm2) on the properties of p +-n-n + silicon structures, including the nonequilibrium charge carrier lifetime (τ), reverse current (I R), and forward current-voltage (I-U) characteristics. In the case of a screen with d = 14 mm (3.8 g/cm2), the irradiated structures exhibit significantly smaller changes in I R values and I-U curves compared to those for d = 2–12 mm, whereas a decrease in τ (from 20 to 1.5 μs) is the same.

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Authors and Affiliations

  1. Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, Minsk, 220072, Belarus

    I. G. Marchenko & N. E. Zhdanovich

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  1. I. G. Marchenko
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  2. N. E. Zhdanovich
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Correspondence to I. G. Marchenko.

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Original Russian Text © I.G. Marchenko, N.E. Zhdanovich, 2010, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2010, Vol. 36, No. 10. pp. 45–51.

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Marchenko, I.G., Zhdanovich, N.E. Effect of electron irradiation attenuated by aluminum screens on the electrical parameters of p-n silicon structures. Tech. Phys. Lett. 36, 464–467 (2010). https://doi.org/10.1134/S1063785010050226

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  • DOI: https://doi.org/10.1134/S1063785010050226

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