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Studying electric field profiles in GaAs-based detector structures by Kelvin probe force microscopy

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Abstract

The method of scanning Kelvin probe force microscopy has been used to study the electric field distribution in GaAs-based p +-π-n-n + detector structures. In the active layer volume, two maxima in the field strength profiles have been found, which are localized in the regions of p +-π and π-n junctions. A volt-age drop on the π-n junction expands the region of collection of nonequilibrium holes, thus increasing the charge collection efficiency for the absorption of γ photons with an energy of 59.5 keV.

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Authors and Affiliations

  1. Tomsk State University, Tomsk, 634050, Russia

    M. D. Vilisova, V. P. Germogenov, O. Zh. Kaztaev, V. A. Novikov, I. V. Ponomarev & A. N. Titkov

  2. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    M. D. Vilisova, V. P. Germogenov, O. Zh. Kaztaev, V. A. Novikov, I. V. Ponomarev & A. N. Titkov

Authors
  1. M. D. Vilisova
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  2. V. P. Germogenov
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  3. O. Zh. Kaztaev
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  4. V. A. Novikov
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  5. I. V. Ponomarev
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  6. A. N. Titkov
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Correspondence to M. D. Vilisova.

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Original Russian Text © M.D. Vilisova, V.P. Germogenov, O.Zh. Kaztaev, V.A. Novikov, I.V. Ponomarev, A.N. Titkov, 2010, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2010, Vol. 36, No. 9, pp. 95–101.

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Vilisova, M.D., Germogenov, V.P., Kaztaev, O.Z. et al. Studying electric field profiles in GaAs-based detector structures by Kelvin probe force microscopy. Tech. Phys. Lett. 36, 436–438 (2010). https://doi.org/10.1134/S1063785010050147

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  • DOI: https://doi.org/10.1134/S1063785010050147

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