Abstract
Fast-response, uncooled p-i-n photodiodes with a long-wavelength spectral sensitivity boundary at λ = 2.4 μm have been created on the basis of GaSb/GaInAsSb/GaAlAsSb heterostructures. A low doping level (1014–1015 cm−3) in the active layer ensured a low capacitance of the photodiode structure (below 1 pF at a sensitive area diameter of 100 μm) and a record small response time (on a level of 100–150 ps). The photodiode pass band reaches up to 2 GHz. The proposed devices are characterized by a small dark current level (500–1000 nA at a reverse bias voltage of 1–3 V) and a detection ability reaching 9 × 1010 cm Hz1/2 W−1 in a spectral interval of maximum sensitivity within 1.9–2.2 μm.
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Original Russian Text © I.A. Andreev, O.Yu. Serebrennikova, G.S. Sokolovskii, E.V. Kunitsyna, V.V. Dyudelev, I.M. Gadzhiev, A.G. Deryagin, E.A. Grebenshchikova, G.G. Konovalov, M.P. Mikhailova, N.D. Il’inskaya, V.I. Kuchinskii, Yu.P. Yakovlev, 2010, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2010, Vol. 36, No. 9, pp. 43–49.
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Andreev, I.A., Serebrennikova, O.Y., Sokolovskii, G.S. et al. Fast-response p-i-n photodiodes for 0.9–2.4 μm wavelength range. Tech. Phys. Lett. 36, 412–414 (2010). https://doi.org/10.1134/S1063785010050068
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DOI: https://doi.org/10.1134/S1063785010050068