Abstract
Terahertz photoresponse of a GaAs/InGaAs transistor structure with large-area slit grating gate has been measured. Peaks in the photoresponse curve are assigned to plasmon resonances excited in the structure. More effective excitation of plasmon resonances is achieved in a grating gate structure with narrow slits, which increase the photoresponse amplitude by an order of magnitude.
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Original Russian Text © K.V. Marem’yanin, D.M. Ermolaev, D.V. Fateev, S.V. Morozov, N.A. Maleev, V.E. Zemlyakov, V.I. Gavrilenko, V.V. Popov, S.Yu. Shapoval, 2010, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2010, Vol. 36, No. 8, pp. 39–47.
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Marem’yanin, K.V., Ermolaev, D.M., Fateev, D.V. et al. Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate. Tech. Phys. Lett. 36, 365–368 (2010). https://doi.org/10.1134/S106378501004022X
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DOI: https://doi.org/10.1134/S106378501004022X