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Visible photoluminescence of zinc oxide films electrochemically deposited on silicon substrates

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Abstract

Continuous crystalline films of zinc oxide (ZnO) with thicknesses of 6–10 μm were obtained by electrochemical deposition from aqueous zinc nitrate solutions on silicon substrates with a buffer nickel layer. X-ray diffraction measurements showed that the polycrystalline films possess a hexagonal crystal lattice with predominant (0002) orientation. The obtained ZnO films exhibit strong photoluminescence in the visible spectral range at room temperature.

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Authors and Affiliations

  1. Belarussian State University of Informatics and Radioelectronics, Minsk, 220013, Belarus

    E. B. Chubenko & V. P. Bondarenko

  2. University of Rome “La Sapienza”, 00184, Rome, Italy

    M. Balucani

Authors
  1. E. B. Chubenko
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  2. V. P. Bondarenko
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  3. M. Balucani
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Correspondence to E. B. Chubenko.

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Original Russian Text © E.B. Chubenko, V.P. Bondarenko, M. Balucani, 2009, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 35, No. 24, pp. 74–80.

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Chubenko, E.B., Bondarenko, V.P. & Balucani, M. Visible photoluminescence of zinc oxide films electrochemically deposited on silicon substrates. Tech. Phys. Lett. 35, 1160–1162 (2009). https://doi.org/10.1134/S1063785009120256

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  • DOI: https://doi.org/10.1134/S1063785009120256

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