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Dynamic chaos in the microwave range generated in SiGe-based autooscillatory structure

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Abstract

A chaotic microwave autooscillatory structure has been designed, implemented on a monolithic IC manufactured by 0.25-μm silicon-germanium technology, and studied. The experiments with the IC showed the possibility of generating stable chaotic oscillations in the 3–8-GHz range.

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Authors and Affiliations

  1. Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia

    A. S. Dmitriev, E. V. Efremova & A. Yu. Nikishov

Authors
  1. A. S. Dmitriev
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  2. E. V. Efremova
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  3. A. Yu. Nikishov
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Correspondence to A. S. Dmitriev.

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Original Russian Text © A.S. Dmitriev, E.V. Efremova, A.Yu. Nikishov, 2009, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 35, No. 23, pp. 40–46.

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Dmitriev, A.S., Efremova, E.V. & Nikishov, A.Y. Dynamic chaos in the microwave range generated in SiGe-based autooscillatory structure. Tech. Phys. Lett. 35, 1090–1092 (2009). https://doi.org/10.1134/S1063785009120062

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  • DOI: https://doi.org/10.1134/S1063785009120062

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