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Mechanism of metallic conductivity at the interface of organic dielectrics

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Abstract

A physical model of the metallic-type conductivity at the interface between an organic semiconductor or dielectric and a metals or another organic material is proposed. The conductivity arises due to the formation of geminal pairs with a rather high surface density at the interface. Conditions under which the transitions between molecules require neither thermal activation nor tunneling for a significant fraction of charge carriers are determined. The values of electric conductivity and carrier mobility are estimated using numerical modeling.

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Authors and Affiliations

  1. Moscow Engineering Physics Institute (State Technical University), Moscow, 115409, Russia

    V. R. Nikitenko

  2. Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences, Moscow, 119991, Russia

    A. R. Tameev & A. V. Vannikov

Authors
  1. V. R. Nikitenko
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  2. A. R. Tameev
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  3. A. V. Vannikov
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Correspondence to V. R. Nikitenko.

Additional information

Original Russian Text © V.R. Nikitenko, A.R. Tameev, A.V. Vannikov, 2009, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 35, No. 17, pp. 81–88.

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Nikitenko, V.R., Tameev, A.R. & Vannikov, A.V. Mechanism of metallic conductivity at the interface of organic dielectrics. Tech. Phys. Lett. 35, 823–826 (2009). https://doi.org/10.1134/S1063785009090119

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  • DOI: https://doi.org/10.1134/S1063785009090119

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