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Ferromagnetism in GaAs structures with Mn-delta-doped layers

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Abstract

It is established that GaAs-based semiconductor heterostructures containing a single layer delta-doped with manganese, obtained by combining the methods of metalorganic chemical vapor deposition (MOCVD) in a hydride system and laser ablation of solid targets in a common technological cycle, possess ferromagnetic properties. The structures demonstrate nonlinear magnetic-field dependences of the Hall resistance with a hysteresis (at a coercivity of about 80 Oe) and show a negative magnetoresistance (up to 4% in a magnetic field of 3000 Oe) at temperatures below the Curie point (T C ≈ 30 K).

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References

  1. H. Onho, J. Magn. Magn. Mater. 200, 110 (1999).

    Article  ADS  Google Scholar 

  2. A. M. Nazmul, T. Amemiya, Y. Shuto, S. Sugahara, and M. Tanaka, Phys. Rev. Lett. 95, 017 201 (2005).

    Google Scholar 

  3. R. K. Kawakami, E. Johnston-Halperin, L. F. Chen, M. Hanson, N. Guebels, J. S. Speck, A. C. Gossard, and D. D. Awschalom, Appl. Phys. Lett. 77, 2379 (2000).

    Article  ADS  Google Scholar 

  4. K. Onomitsu, H. Fukui, T. Maeda, Y. Hirayama, and Y. Horikoshi, J. Crystal Growth 278, 699 (2005).

    Article  ADS  Google Scholar 

  5. A. M. Nazmul, S. Sugahara, and M. Tanaka, J. Crystal Growth 251, 303 (2003).

    Article  ADS  Google Scholar 

  6. B. A. Aronzon, A. S. Lagutin, V. V. Ryl’kov, V. V. Tugushev, V. N. Men’shov, A. V. Lashkul, R. Laiho, O. V. Vikhrova, Yu. A. Danilov, and B. N. Zvonkov, Pis’ma Zh. Éksp. Teor. Fiz. 87, 192 (2008) [JETP Lett. 87, 164 (2008)].

    Google Scholar 

  7. E. L. Nagaev, Physics of Magnetic Semiconductors (Nauka, Moscow, 1979) [in Russian].

    Google Scholar 

  8. A. Arrott, Phys. Rev. 108, 1394 (1957).

    Article  ADS  Google Scholar 

Download references

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Authors and Affiliations

  1. Physicotechnical Research Institute, Nizhni Novgorod State University, Nizhni Novgorod, 603950, Russia

    O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, B. N. Zvonkov & A. V. Kudrin

  2. Nizhni Novgorod State University, Nizhni Novgorod, 603950, Russia

    I. L. Kalent’eva

Authors
  1. O. V. Vikhrova
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  2. Yu. A. Danilov
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  3. M. V. Dorokhin
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  4. B. N. Zvonkov
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  5. I. L. Kalent’eva
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  6. A. V. Kudrin
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Correspondence to O. V. Vikhrova.

Additional information

Original Russian Text © O.V. Vikhrova, Yu.A. Danilov, M.V. Dorokhin, B.N. Zvonkov, I.L. Kalent’eva, A.V. Kudrin, 2009, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 35, No. 14, pp. 8–17.

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Vikhrova, O.V., Danilov, Y.A., Dorokhin, M.V. et al. Ferromagnetism in GaAs structures with Mn-delta-doped layers. Tech. Phys. Lett. 35, 643–646 (2009). https://doi.org/10.1134/S1063785009070165

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  • DOI: https://doi.org/10.1134/S1063785009070165

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