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The nature of white luminescence in SiO2:C layers

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Abstract

Silicon oxide layers containing incorporated carbon (SiO2:C) have been obtained by sequential thermal carbonization/oxidation of porous silicon. The as-synthesized SiO2:C layers exhibit intense white photoluminescence (PL). The characteristics of excitation, emission, and relaxation of the white luminescence in the SiO2:C layers have been studied. It is established that the observed broad PL band in fact consists of at least two subbands with the maxima of intensity in the green and blue spectral regions. Based on the experimental data, a model of the PL excitation and radiative recombination in SiO2:C layers is proposed and justified.

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Authors and Affiliations

  1. V.E. Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine

    A. V. Vasin, V. I. Kushnirenko, V. S. Lysenko & A. N. Nazarov

  2. Japan Fine Ceramics Center, Nagoya, 456-8587, Japan

    Yukari Ishikawa

  3. Department of Physics, University of Turku, FI-20014, Turku, Finland

    J. Salonen

Authors
  1. A. V. Vasin
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  2. V. I. Kushnirenko
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  3. V. S. Lysenko
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  4. A. N. Nazarov
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  5. Yukari Ishikawa
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  6. J. Salonen
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Corresponding author

Correspondence to V. I. Kushnirenko.

Additional information

Original Russian Text © A.V. Vasin, V.I. Kushnirenko, V.S. Lysenko, A.N. Nazarov, Yukari Ishikawa, J. Salonen, 2009, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 35, No. 12, pp. 45–54.

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Vasin, A.V., Kushnirenko, V.I., Lysenko, V.S. et al. The nature of white luminescence in SiO2:C layers. Tech. Phys. Lett. 35, 559–562 (2009). https://doi.org/10.1134/S1063785009060224

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  • DOI: https://doi.org/10.1134/S1063785009060224

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