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Melting of porous silicon under the action of a nanosecond pulsed high-power ion beam

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Abstract

We have studied the melting of porous silicon (por-Si) layers under the action of a nanosecond pulsed high-power proton-carbon ion beam. Dimensions of ellipsoidal silicon particles formed as a result of this processing have been determined. The threshold energy density necessary for the melting of por-Si with a porosity of ∼50% is experimentally evaluated.

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Authors and Affiliations

  1. Institute of Semiconductor Physics (Omsk Division), Siberian Branch, Russian Academy of Sciences, Omsk, 644018, Russia

    V. S. Kovivchak & N. A. Davletkil’deev

Authors
  1. V. S. Kovivchak
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  2. N. A. Davletkil’deev
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Correspondence to V. S. Kovivchak.

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Original Russian Text © V.S. Kovivchak, N.A. Davletkil’deev, 2009, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 35, No. 10, pp. 12–17.

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Kovivchak, V.S., Davletkil’deev, N.A. Melting of porous silicon under the action of a nanosecond pulsed high-power ion beam. Tech. Phys. Lett. 35, 446–448 (2009). https://doi.org/10.1134/S1063785009050186

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  • DOI: https://doi.org/10.1134/S1063785009050186

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