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Quasi-periodic structures formed in GaAs nanowires activated by gold drops

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Abstract

A physical model that describes the formation of quasi-periodic structures in GaAs nanowires (NWs) growing under gold drops is proposed. Calculations of the growth of these NWs under the molecular beam epitaxy conditions have been performed with allowance for the fluctuations of gallium concentration in the catalyst drop. The temporal variation of the NW height is determined and the thicknesses of cubic and hexagonal phase layers are calculated, which show good agreement with the available experimental data.

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Authors and Affiliations

  1. St. Petersburg Physics and Technology Research and Education Center, Russian Academy of Sciences, St. Petersburg, 195220, Russia

    M. N. Lubov, D. V. Kulikov & Yu. V. Trushin

  2. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    M. N. Lubov, D. V. Kulikov & Yu. V. Trushin

  3. Academic Physics and Technology University, Russian Academy of Sciences, St. Petersburg, 195520, Russia

    M. N. Lubov, D. V. Kulikov & Yu. V. Trushin

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  1. M. N. Lubov
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  2. D. V. Kulikov
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  3. Yu. V. Trushin
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Correspondence to Yu. V. Trushin.

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Original Russian Text © M.N. Lubov, D.V. Kulikov, Yu.V. Trushin, 2009, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 35, No. 8, pp. 67–72.

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Lubov, M.N., Kulikov, D.V. & Trushin, Y.V. Quasi-periodic structures formed in GaAs nanowires activated by gold drops. Tech. Phys. Lett. 35, 377–379 (2009). https://doi.org/10.1134/S1063785009040270

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  • DOI: https://doi.org/10.1134/S1063785009040270

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