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Recording double-exposure interferograms on a photothermoplastic carrier in photoinduced and photothermoplastic regimes

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Abstract

It is suggested to record double-exposure holographic interferograms on a photothermoplastic carrier based on chalcogenide glassy semiconductors (CGSs), with the first exposure performed using the regime of photoinduced changes in the semiconductor layer and the second, the photothermoplastic regime on the thermoplastic layer surface. It is shown that, during the second exposure, the image stored in the CGS layer is additionally developed on the thermoplastic layer surface. The development of this îhiddenî reference image on the thermoplastic layer makes possible the separate comparison of this image to each subsequent holographic image reversibly recorded in the photothermoplastic regime on the thermoplastic layer surface.

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Authors and Affiliations

  1. Optoelectronics Center, Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau, Moldova

    A. M. Nastas, A. M. Andriesh, V. V. Bivol, I. N. Slepnev & A. M. Prisakar

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  1. A. M. Nastas
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  2. A. M. Andriesh
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  3. V. V. Bivol
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  4. I. N. Slepnev
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  5. A. M. Prisakar
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Correspondence to A. M. Nastas.

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Original Russian Text © A.M. Nastas, A.M. Andriesh, V.V. Bivol, I.N. Slepnev, A.M. Prisakar, 2009, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 35, No. 8, pp. 62–66.

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Nastas, A.M., Andriesh, A.M., Bivol, V.V. et al. Recording double-exposure interferograms on a photothermoplastic carrier in photoinduced and photothermoplastic regimes. Tech. Phys. Lett. 35, 375–376 (2009). https://doi.org/10.1134/S1063785009040269

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  • DOI: https://doi.org/10.1134/S1063785009040269

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