Abstract
The state of the surface of standard phosphorus-doped n-Si(111) and n-Si(100) (KEF grade) and boron-doped p-Si(111) (KDB grade) single-crystal wafers treated in a 50% HF–70% HNO3 (1: 3, v/v) polishing solution has been studied using soft X-ray reflection spectroscopy. The fine structure of the reflection spectra in the region of the Si L 2,3 ionization threshold has been analyzed. The dependence of the natural oxide thickness on the orientation of a silicon single crystal surface is established.
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Original Russian Text © E.O. Filatova, A.A. Sokolov, E.Yu. Taracheva, I.V. Bagrov, 2009, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 35, No. 2, pp. 36–41.
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Filatova, E.O., Sokolov, A.A., Taracheva, E.Y. et al. Studying natural oxide on the surface of n-Si(111), n-Si(100), and p-Si(111) single crystal wafers by X-ray reflection spectroscopy. Tech. Phys. Lett. 35, 70–72 (2009). https://doi.org/10.1134/S1063785009010210
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DOI: https://doi.org/10.1134/S1063785009010210