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Optical excitation of nonidentical quantum wells in the active region of a vertical-external-cavity laser

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Abstract

Optical excitation of a semiconductor structure comprising two nonidentical quantum wells (QWs) separated by barriers absorbing the pump radiation has been numerically simulated. It is shown that the equalization of populations in the QWs can be achieved in two ways: (i) shift of the deeper QW to a region of weak carrier generation and (ii) introduction of a blocking layer preventing the transport of carriers.

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Authors and Affiliations

  1. Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences, Saratov, 410019, Russia

    M. Yu. Morozov & Yu. A. Morozov

  2. Saratov State Technical University, Saratov, 410054, Russia

    I. V. Krasnikova

Authors
  1. M. Yu. Morozov
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  2. Yu. A. Morozov
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  3. I. V. Krasnikova
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Correspondence to Yu. A. Morozov.

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Original Russian Text © M.Yu. Morozov, Yu.A. Morozov, I.V. Krasnikova, 2008, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2008, Vol. 34, No. 23, pp. 80–86.

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Morozov, M.Y., Morozov, Y.A. & Krasnikova, I.V. Optical excitation of nonidentical quantum wells in the active region of a vertical-external-cavity laser. Tech. Phys. Lett. 34, 1034–1036 (2008). https://doi.org/10.1134/S1063785008120134

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  • DOI: https://doi.org/10.1134/S1063785008120134

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