Abstract
First results of the electron-microscopic investigation of thin silicon carbide (SiC) layers grown on silicon using a new method of solid phase epitaxy are presented. It is shown that, at the initial stage of epitaxial growth, a transition layer is formed which consists of various SiC polytypes. This layer occurs at the interface between the substrate and a single-crystalline SiC layer possessing predominantly a 3C polytype structure. It is established that pores with dimensions ranging from a fraction of micron to several dozen nanometers are formed in a near-surface layer of the silicon substrate, which favor the growth of epitaxial, weakly strained single-crystalline SiC layers.
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Original Russian Text © L.M. Sorokin, N.V. Veselov, M.P. Shcheglov, A.E. Kalmykov, A.A. Sitnikova, N.A. Feoktistov, A.V. Osipov, S.A. Kukushkin, 2008, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2008, Vol. 34, No. 22, pp. 88–94.
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Sorokin, L.M., Veselov, N.V., Shcheglov, M.P. et al. Electron-microscopic investigation of a SiC/Si(111) structure obtained by solid phase epitaxy. Tech. Phys. Lett. 34, 992–994 (2008). https://doi.org/10.1134/S1063785008110278
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DOI: https://doi.org/10.1134/S1063785008110278