Abstract
Disk-shaped cavities in the form of cylinders with diameters of 200, 100, and 50 μm and a mesa height of up to 30 m with the vertical part of the side surface reaching 10 m have been created for the first time for whispering gallery mode (WGM) semiconductor lasers based on InAs/InAsSb0.11P0.24 heterostructures. The cavities were formed by etching in a specially selected HBr-H2Cr2O7-H3PO4 mixture, which ensured an increase in the length of the vertical part of the side surface at a decrease in the surface roughness. These improvements increased the stability of optical modes in the disk cavity of the WGM laser and ensured generation with a wavelength of λ ≈ 3 μm in a continuous regime at 77 K.
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Original Russian Text © E.A. Grebenshchikova, V.V. Sherstnev, S.S. Kizhaev, T.B. Popova, Yu.P. Yakovlev, 2008, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2008, Vol. 34, No. 22, pp. 7–13.
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Grebenshchikova, E.A., Sherstnev, V.V., Kizhaev, S.S. et al. Creating disk-shaped cavity with a vertical side surface for an infrared whispering-gallery-mode laser (λ ≈ 3 μm). Tech. Phys. Lett. 34, 953–955 (2008). https://doi.org/10.1134/S1063785008110163
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DOI: https://doi.org/10.1134/S1063785008110163