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Thin-film PZT/SiC structure on silicon substrate: Formation, structural features, and dielectric properties

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Abstract

A new thin-film structure representing the Pt/PZT/SiC/Si system is obtained. The structure comprises a lead zirconate titanate Pb(Zr,Ti)O3 (PZT) film deposited onto thin (90–100 nm) single crystal silicon carbide layers of 3C-SiC and 4H-SiC polytypes grown by a new solid-phase epitaxy on single crystal silicon substrates. Methods used for the formation of this multilayer structure are described, and its structural and dielectric characteristics are presented.

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Authors and Affiliations

  1. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    I. P. Pronin, E. Yu. Kaptelov, S. V. Senkevich, V. A. Klimov, N. A. Feoktistov, A. V. Osipov & S. A. Kukushkin

  2. Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg, 199178, Russia

    I. P. Pronin, E. Yu. Kaptelov, S. V. Senkevich, V. A. Klimov, N. A. Feoktistov, A. V. Osipov & S. A. Kukushkin

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  1. I. P. Pronin
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  2. E. Yu. Kaptelov
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  3. S. V. Senkevich
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  4. V. A. Klimov
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  5. N. A. Feoktistov
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  6. A. V. Osipov
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  7. S. A. Kukushkin
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Correspondence to I. P. Pronin.

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Original Russian Text © I.P. Pronin, E.Yu. Kaptelov, S.V. Senkevich, V.A. Klimov, N.A. Feoktistov, A.V. Osipov, S.A. Kukushkin, 2008, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2008, Vol. 34, No. 19, pp. 46–52.

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Pronin, I.P., Kaptelov, E.Y., Senkevich, S.V. et al. Thin-film PZT/SiC structure on silicon substrate: Formation, structural features, and dielectric properties. Tech. Phys. Lett. 34, 838–840 (2008). https://doi.org/10.1134/S1063785008100088

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  • DOI: https://doi.org/10.1134/S1063785008100088

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