Abstract
The properties of defect modes in chiral photonic crystals with anisotropic defects are considered, and changes in these properties caused by variations of the position of a defect layer in the system are analyzed. It is shown that, for certain thicknesses of a defect layer, a change in its position leads to a change in the ellipticity of the transmitted (reflected) light. This phenomenon can be used to create a device capable of selecting the polarization of light by changing the position of a defect layer. Such a device can also operate as a light modulator, a purely optical diode, or a bidirectional asymmetric switch. In a certain wavelength range, this light polarization selector can produce controlled rotation of the polarization plane.
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Original Russian Text © A.H. Gevorgyan, 2008, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2008, Vol. 34, No. 6, pp. 80–87.