Abstract
The effect of ultrasonic treatment at various powers on the density N SS of surface states and their energy spectrum in p-type silicon single crystals has been studied. It is established that, depending on the regime of ultrasonic treatment, N SS can either increase or decrease compared to that in the initial single crystals. This is accompanied by a redistribution of the total charge of the surface states over the silicon bandgap width. This phenomenon is related to the fact that an acoustic wave, being an energy carrier, modifies a defect subsystem of the crystal by redistributing the impurity atoms and by generating new defects.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
B. N. Zaveryukhin, V. D. Krevchik, and R. A. Muminov, Abstracts of Papers of the 33rd Meeting on Nuclear Spectroscopy and Atomic Nucleus Structure (Nauka, Leningrad, 1983), p. 530.
A. G. Gaibov, B. N. Zaveryukhin, and V. D. Krevchik, Abstracts of Papers of the 33rd Meeting on Nuclear Spectroscopy and Atomic Nucleus Structure (Nauka, Leningrad, 1983), p. 531.
A. G. Gaibov, B. N. Zaveryukhin, V. D. Krevchik, et al., Pis’ma Zh. Tekh. Fiz. 10, 616 (1984) [Sov. Tech. Phys. Lett. 10, 260 (1984)].
E. B. Zaveryukhina, N. N. Zaveryukhina, L. N. Lezilova, et al., Pis’ma Zh. Tekh. Fiz. 31(1), 54 (2005) [Tech. Phys. Lett. 31, 27 (2005)].
B. N. Zaveryukhin, V. D. Krevchik, R. A. Muminov, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 20, 525 (1986) [Sov. Phys. Semicond. 20, 330 (1986)].
O. Ya. Olikh and I. V. Ostrovskiĭ, Fiz. Tverd. Tela. (St. Petersburg) 44, 1198 (2002) [Phys. Solid State 44, 1249 (2002)].
I. B. Ermolovich, V. V. Milenin, R. V. Konakova, and L. N. Primenko, Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 503 (1997) [Semiconductors 31, 427 (1997)].
K. A. Valiev, B. I. Kozlov, and A. A. Kokin, Mikroélektronika 1(5), 26 (1972).
V. G. Litovchenko, V. P. Kovbasyuk, and A. A. Sadovnichii, in Semiconductor Technology and Microelectronocs (A Collection of Papers) (Naukova Dumka, Kiev, 1970), Issue 4, p. 39.
P. B. Parchinskiĭ, S. I. Vlasov, and L. G. Ligai, Fiz. Tekh. Poluprovodn. (St. Pegtersburg) 40, 829 (2006) [Semiconductors 40, 808 (2006)].
P. B. Parchinskiĭ, Mikroélektronika 34(6), 420 (2005).
V. V. Maier, Simple Experiments with Ultrasound (Nauka, Moscow,1978), pp. 109–132 [in Russian].
S. M. Sze, Physics of Semiconductor Devices (Wiley-Interscience, New York, 1981).
L. S. Berman, S. I. Vlasov, V. S. Briskin, and A. D. Remenyuk, Zavod. Lab. 46, 242 (1980).
L. M. Terman, Solid State Electron., No. 5, 803 (1962).
I. V. Ostrovskiĭ, L. P. Steblenko, and A. B. Nadtochii, Fiz. Tekh. Poluprovodn. (St. Pegtersburg) 34, 257 (2000) [Semiconductors 34, 254 (2000)].
B. N. Zaveryukhin, N. N. Zaveryukhina, and O. M. Tursunkulov, Pis’ma Zh. Tekh. Fiz. 28(18), 1 (2002) [Tech. Phys. Lett. 28, 752 (2002)].
H. F. Matare, Defect Electronics in Semiconductors (Wiley, New York, 1971), Ch. 11.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © N.N. Zaveryukhina, E.B. Zaveryukhina, S.I. Vlasov, B.N. Zaveryukhin, 2008, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2008, Vol. 34, No. 6, pp. 36–42.
Rights and permissions
About this article
Cite this article
Zaveryukhina, N.N., Zaveryukhina, E.B., Vlasov, S.I. et al. Acoustostimulated changes in the density of surface states and their energy spectrum in p-type silicon single crystals. Tech. Phys. Lett. 34, 241–243 (2008). https://doi.org/10.1134/S106378500803019X
Revised:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S106378500803019X