Abstract
We have studied the convective instability of a horizontal layer of a liquid semiconductor or an ionic melt in the presence of a variable temperature gradient under microgravity conditions in the case where an excess charge can appear only as a result of the thermostimulated diffusion. Thresholds for the onset of thermoelectric convective instability are determined. It is established that, under variable thermal action with a zero mean value, perturbations of a subharmonic response are absent. Depending on the amplitude and frequency of modulation and on the physical properties of the semiconductor (or the melt), synchronous perturbations are differently manifested and belong to various classes. The amplitudes and frequencies of an external action necessary for the effective suppression of thermoelectric convection are determined.
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Original Russian Text © A.V. Belyaev, B.L. Smorodin, 2008, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2008, Vol. 34, No. 5, pp. 79–86.