Abstract
The spectrometric characteristics of nuclear radiation detectors based on 4H-SiC films with iondoped p +-n junctions have been studied for the first time in a temperature range from 25 to 375°C. The experiments with 5.8-MeV α particles were performed in a high-temperature chamber of special design. Factors related to the structural characteristics of both the initial silicon carbide and the ion-doped p +-n junctions are established, which limit from above the temperature interval of detector operation in a spectrometric regime. An increase in the efficiency of the diffusion-drift charge transport with increasing temperature has been observed, which is explained by an increase in the diffusion length of minority carriers.
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Original Russian Text © E.V. Kalinina, A.M. Ivanov, N.B. Strokan, 2008, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2008, Vol. 34, No. 5, pp. 63–70.
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Kalinina, E.V., Ivanov, A.M. & Strokan, N.B. Performance of p-n 4H-SiC film nuclear radiation detectors for operation at elevated temperatures (375 °C). Tech. Phys. Lett. 34, 210–212 (2008). https://doi.org/10.1134/S1063785008030103
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DOI: https://doi.org/10.1134/S1063785008030103