Abstract
Use of an external cavity with a grating ensures effective narrowing of the linewidth (∼0.35 nm) of a high-power multimode semiconductor laser with a broad (100 μm) stripe contact. An output power of up to 550 mW has been reached with experimental external-grating-cavity laser diodes. It is demonstrated that a 3-mm-long multimode laser diode based on a quantum-dimensional AlGaAs/GaAs/InGaAs heterostructure (λ = 1.06 μm) can be used with a directly pumped PPLN crystal waveguide to obtain second-harmonic radiation with λ = 0.532 μm.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 388 (2005) [Semiconductors 39, 370 (2005)].
T. Hara, M. Yatsuki, Y. Yamane, et al., Quant. Electron. Laser Sci. Conf. 2, 856 (2005).
V. Raab, D. Skoczowsky, and R. Menzel, Optics Lett. 27, 1995 (2002).
S. B. Bayram and T. E. Chupp, Rev. Sci. Instrum. 73, 4169 (2002).
B. V. Zhdanov, T. Ehrenreich, and R. J. Knize, Electron. Lett. 43, 221 (2007).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © D.A. Vinokurov, A.G. Deryagin, V.V. Dyudelev, V.I. Kuchinskiĭ, A.V. Lyutetskiĭ, N.A. Pikhtin, G.S. Sokolovskiĭ, A.L. Stankevich, I.S. Tarasov, 2008, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2008, Vol. 34, No. 5, pp. 15–21.
Rights and permissions
About this article
Cite this article
Vinokurov, D.A., Deryagin, A.G., Dyudelev, V.V. et al. High-power external-cavity AlGaAs/GaAs/InGaAs quantum-dimensional heterolasers (λ = 1.06 μm). Tech. Phys. Lett. 34, 187–189 (2008). https://doi.org/10.1134/S1063785008030036
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063785008030036