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Impact-ionization-stimulated electroluminescence in isotype n-GaSb/n-AlGaAsSb/n-GaInAsSb heterostructures

Abstract

We have studied electroluminescence in n-GaSb/n-AlGaAsSb/n-GaInAsSb heterostructures with isotype heterojunctions, in which the quantum efficiency of emission is increased due to the additional production of electron-hole pairs as a result of the impact ionization that takes place near the heterointerface. The impact ionization in such heterostructures is possible due to the presence of deep wells in the energy band structure.

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Correspondence to N. L. Bazhenov.

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Original Russian Text © N.L. Bazhenov, B.E. Zhurtanov, K.D. Mynbaev, A.P. Astakhova, A.N. Imenkov, M.P. Mikhaĭlova, V.A. Smirnov, N.D. Stoyanov, Yu.P. Yakovlev, 2007, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 33, No. 23, pp. 1–6.

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Bazhenov, N.L., Zhurtanov, B.E., Mynbaev, K.D. et al. Impact-ionization-stimulated electroluminescence in isotype n-GaSb/n-AlGaAsSb/n-GaInAsSb heterostructures. Tech. Phys. Lett. 33, 987–989 (2007). https://doi.org/10.1134/S1063785007120012

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PACS numbers

  • 78.55.Cr
  • 78.60.Fi
  • 85.60.Jb