Abstract
We have studied conditions for the synthesis of nanodimensional silicon islands (quantum dots) in a microwave low-pressure gas discharge plasma on noncrystalline substrates with a weak interaction at the deposit-substrate interface. It is established that the formation of nanoislands proceeds via the leveling (healing) of depressions on the substrate surface. A mechanism of the influence of the parameters of deposition on the kinetics of formation of nanoislands is proposed.
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Original Russian Text © D.V. Nefedov, R.K. Yafarov, 2007, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 33, No. 21, pp. 78–84.
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Nefedov, D.V., Yafarov, R.K. Migration healing of surface relief during the formation of nanocrystals in a microwave low-pressure gas discharge. Tech. Phys. Lett. 33, 933–935 (2007). https://doi.org/10.1134/S1063785007110120
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DOI: https://doi.org/10.1134/S1063785007110120