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Interaction of optical radiation with GaAs nanowhisker arrays

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Abstract

We have studied the reflectivity spectra of doped GaAs nanowhiskers (NWs) with various morphologies, which were grown by molecular-beam epitaxy. It is established that the character of the reflectivity spectra of NWs is determined by the shape of nanocrystals. NWs with droplike and pointlike vertices differently interact with electromagnetic radiation. Laser radiation produces a spectraly selective action on the NW array, which leads to a change in the NW height and induces “caking” of their vertices, thus modifying the reflectivity of the sample. This phenomenon can be used for the creation of local microstructures with preset characteristics in large NW arrays.

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Authors and Affiliations

  1. Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, 190103, Russia

    O. A. Neucheva, A. A. Evstrapov, Yu. B. Samsonenko & G. E. Cirlin

  2. St. Petersburg Physical Engineering Research and Education Center, Russian Academy of Sciences, St. Petersburg, 195220, Russia

    O. A. Neucheva, A. A. Evstrapov, Yu. B. Samsonenko & G. E. Cirlin

  3. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    O. A. Neucheva, A. A. Evstrapov, Yu. B. Samsonenko & G. E. Cirlin

Authors
  1. O. A. Neucheva
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  2. A. A. Evstrapov
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  3. Yu. B. Samsonenko
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  4. G. E. Cirlin
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Correspondence to A. A. Evstrapov.

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Original Russian Text © O.A. Neucheva, A.A. Evstrapov, Yu.B. Samsonenko, G.E. Cirlin, 2007, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 33, No. 21, pp. 56–62.

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Neucheva, O.A., Evstrapov, A.A., Samsonenko, Y.B. et al. Interaction of optical radiation with GaAs nanowhisker arrays. Tech. Phys. Lett. 33, 923–925 (2007). https://doi.org/10.1134/S1063785007110090

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  • DOI: https://doi.org/10.1134/S1063785007110090

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