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Effect of neutron radiation on the photoelectric parameters of p-n-InSe structures

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Abstract

The effect of irradiation with fast reactor neutrons at an effective energy of 1 MeV and a fluence within Φ = 1 × 1014−5 × 1015 n/cm2 on the photoelectric parameters of p-n-InSe homojunctions obtained in direct optical contact between p- and n-type semiconductors has been studied. The exposure to fast neutrons leads to an increase in the rectification coefficient and the diode ideality factor of the current-voltage characteristics with increasing neutron dose. No significant changes have been observed in the photosensitivity spectra of p-n-InSe structures irradiated to various doses, which allows these structures to be recommended for the creation of radiation-resistant photodetectors.

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Authors and Affiliations

  1. Frantsevich Institute for Problems of Materials Science (Chernivtsy Department), National Academy of Sciences of Ukraine, Chernivtsy, Ukraine

    Z. D. Kovalyuk, O. A. Politanska, P. G. Litovchenko, V. F. Lastovetskii, O. P. Litovchenko, V. K. Dubovoi & L. A. Polivtsev

  2. Institute for Nuclear Investigations, National Academy of Sciences of Ukraine, Kiev, Ukraine

    Z. D. Kovalyuk, O. A. Politanska, P. G. Litovchenko, V. F. Lastovetskii, O. P. Litovchenko, V. K. Dubovoi & L. A. Polivtsev

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  1. Z. D. Kovalyuk
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  2. O. A. Politanska
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  3. P. G. Litovchenko
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  4. V. F. Lastovetskii
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  5. O. P. Litovchenko
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  6. V. K. Dubovoi
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  7. L. A. Polivtsev
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Correspondence to Z. D. Kovalyuk.

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Original Russian Text © Z.D. Kovalyuk, O.A. Politanska, P.G. Litovchenko, V.F. Lastovetskii, O.P. Litovchenko, V.K. Dubovoi, L.A. Polivtsev, 2007, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 33, No. 18, pp. 14–22.

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Kovalyuk, Z.D., Politanska, O.A., Litovchenko, P.G. et al. Effect of neutron radiation on the photoelectric parameters of p-n-InSe structures. Tech. Phys. Lett. 33, 767–770 (2007). https://doi.org/10.1134/S1063785007090167

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  • DOI: https://doi.org/10.1134/S1063785007090167

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