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Effect of electron overheating on the tunneling current of a molecular transistor

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Abstract

The effect of overheating of the electron subsystem on the Coulomb blockade in a structure (molecular transistor) based on a metal cluster containing a finite number of atoms has been theoretically studied. The electron energy spectrum in such quantum grains of cylindrical and spherical shape has been calculated. An increase in the electron subsystem temperature in the cluster leads to vanishing of the current gap and pronounced smoothening of the quantum and Coulomb steps on the current-voltage characteristic of the structure, in agreement with experimental observations.

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Authors and Affiliations

  1. Zaporozhye National Technical University, Zaporozhye, 69063, Ukraine

    V. V. Pogosov, E. V. Vasyutin & A. V. Babich

Authors
  1. V. V. Pogosov
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  2. E. V. Vasyutin
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  3. A. V. Babich
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Correspondence to V. V. Pogosov.

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Original Russian Text © V.V. Pogosov, E.V. Vasyutin, A.V. Babich, 2007, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 33, No. 17, pp. 1–9.

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Pogosov, V.V., Vasyutin, E.V. & Babich, A.V. Effect of electron overheating on the tunneling current of a molecular transistor. Tech. Phys. Lett. 33, 719–722 (2007). https://doi.org/10.1134/S1063785007090015

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  • DOI: https://doi.org/10.1134/S1063785007090015

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