Skip to main content
SpringerLink
Log in

Diamond-like ZnGeP2 semiconductor highly doped with manganese by solid-phase diffusion

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

Diamond-like ZnGeP2 single crystals with a chalcopyrite structure highly doped with manganese have been obtained by means of reactive solid-phase diffusion. According to the EPR data, the concentration of Mn2+ ions reaches up to 1017−1018 cm−3.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. G. P. Suchet, Physical Chemistry of Semiconductors (Metallurgiya, Moscow, 1969) [translated from French].

    Google Scholar 

  2. J. K. Furdyna, J. Appl. Phys. 64, R29 (1988).

    Article  ADS  Google Scholar 

  3. H. Ohno, Electron. Lett. 30, 1954 (1994).

    Article  Google Scholar 

  4. G. A. Medvedkin, T. Ishibashi, T. Nishi, et al., Jpn. J. Appl. Phys. 39, 949 (2000).

    Article  ADS  Google Scholar 

  5. K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39, 5555 (2000).

    Google Scholar 

  6. G. V. Samsonov and L. L. Vereikina, Phosphides (Izd. Akad. Nauk USSR, Kiev, 1961) [in Russian].

    Google Scholar 

  7. A. S. Borshchevskii and T. M. Shantsovoi, Neorg. Mater. 11, 2158 (1975).

    Google Scholar 

  8. E. Buehler and J. H. J. Vernick, J. Cryst. Growth 4, 324 (1971).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    S. I. Goloshchapov & S. E. Nikitin

Authors
  1. S. I. Goloshchapov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. E. Nikitin
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to S. I. Goloshchapov.

Additional information

Original Russian Text © S.I. Goloshchapov, S.E. Nikitin, 2007, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 33, No. 16, pp. 34–38.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Goloshchapov, S.I., Nikitin, S.E. Diamond-like ZnGeP2 semiconductor highly doped with manganese by solid-phase diffusion. Tech. Phys. Lett. 33, 689–691 (2007). https://doi.org/10.1134/S1063785007080196

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063785007080196

PACS numbers

Search

Navigation