Skip to main content
SpringerLink
Log in

Effect of a modified cover layer on the properties of hydrogen-sensitive Pd/GaAs/InGaAs diode heterostructures with quantum wells

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

The influence of a developed surface relief of an overgrowth (cover) layer modified by anodic oxidation and/or etching on the characteristics of hydrogen-sensitive Pd/GaAs/InGaAs diode heterostructures with quantum wells has been studied. The modified structures exhibit a significant increase in sensitivity and response speed, which is related for the most part to a decrease in the effective distance from the surface, on which atomic hydrogen is chemisorbed, to an elastically strained layer of the InGaAs quantum well. This layer retards the diffusion of hydrogen, which leads to an increase in the hydrogen concentration at the interface.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A. V. Evdokimov, M. N. Murshudli, A. E. Rzhanov, et al., Zarubezhn. Élektron. Tekh., No. 2, 3 (1988).

  2. I. A. Karpovich, S. V. Tikhov, E. L. Shobolov, and B. N. Zvonkov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 582 (2002) [Semiconductors 36, 552 (2002)].

    Google Scholar 

  3. S. V. Tikhov, D. A. Pavlov, P. A. Shilyaev, et al., Pis’ma Zh. Tekh. Fiz. 28(9), 1 (2002) [Tech. Phys. Lett. 28, 355 (2002)].

    Google Scholar 

  4. S. V. Tikhov, V. P. Lesnikov, V. V. Podol’skii, and N. V. Shilova, Zh. Tekh. Fiz. 65(11), 120 (1995) [Tech. Phys. 40, 1154 (1995)].

    Google Scholar 

  5. E. H. Rhoderick, Metal-Semiconductor Contacts (Clarendon, Oxford, 1978).

    Google Scholar 

  6. V. I. Gaman, N. O. Duchenko, and V. M. Kanygina, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 1, 69 (1988).

Download references

Author information

Authors and Affiliations

  1. Nizhni Novgorod State University, Nizhni Novogorod, 603950, Russia

    S. V. Tikhov, I. A. Karpovich, Yu. Yu. Gushchina & L. A. Istomin

Authors
  1. S. V. Tikhov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. I. A. Karpovich
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Yu. Yu. Gushchina
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. L. A. Istomin
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to S. V. Tikhov.

Additional information

Original Russian Text © S.V. Tikhov, I.A. Karpovich, Yu.Yu. Gushchina, L.A. Istomin, 2007, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 33, No. 15, pp. 69–74.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Tikhov, S.V., Karpovich, I.A., Gushchina, Y.Y. et al. Effect of a modified cover layer on the properties of hydrogen-sensitive Pd/GaAs/InGaAs diode heterostructures with quantum wells. Tech. Phys. Lett. 33, 661–663 (2007). https://doi.org/10.1134/S1063785007080111

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063785007080111

PACS numbers

Search

Navigation