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Dislocation-disclination transformations and the reverse Hall-Petch effect in nanocrystalline materials

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Abstract

A relay-race dislocation-disclination model of plastic shear development in nanocrystalline materials is proposed, which is based on the mechanism of switching between translational and rotational deformation modes. The dependence of the external deforming stress on the grain size is calculated. It is shown that the switching from the translational to rotational deformation mode and back explains the reverse Hall-Petch effect in nanocrystalline materials.

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Authors and Affiliations

  1. Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg, 199178, Russia

    A. L. Kolesnikova & I. A. Ovid’ko

  2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. E. Romanov

Authors
  1. A. L. Kolesnikova
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  2. I. A. Ovid’ko
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  3. A. E. Romanov
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Corresponding author

Correspondence to A. E. Romanov.

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Original Russian Text © A.L. Kolesnikova, I.A. Ovid’ko, A.E. Romanov, 2007, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 33, No. 15, pp. 26–33.

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Kolesnikova, A.L., Ovid’ko, I.A. & Romanov, A.E. Dislocation-disclination transformations and the reverse Hall-Petch effect in nanocrystalline materials. Tech. Phys. Lett. 33, 641–644 (2007). https://doi.org/10.1134/S1063785007080056

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  • DOI: https://doi.org/10.1134/S1063785007080056

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