Abstract
The structure and properties of tungsten-doped vanadium pentoxide and dioxide films grown by the sol-gel method have been studied. The data of x-ray diffraction investigation and the temperature dependences of conductivity measured in a broad temperature range (50–380 K) are presented. The temperature of the metalsemiconductor phase transition in vanadium dioxide decreases with an increase in the dopant concentration. The phase transition is not observed in the films with tungsten concentrations above 6%. The radius of electron localization on vanadium ions in V1−x W x O2 has been estimated. The results of the investigation of the switching effect in tungsten-doped vanadium pentoxide hydrate are reported.
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Original Russian Text © O.Ya. Berezina, A.A. Velichko, L.A. Lugovskaya, A.L. Pergament, G.B. Stefanovich, D.V. Artyukhin, A.N. Strelkov, 2007, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 33, No. 13, pp. 24–31.