Abstract
The fraction of germanium clusters in solid solutions of the Si1−x Ge x system with a small germanium content (x ∼ 5%) was determined using a method based on the energy analysis of argon ions scattered, upon single and double collisions in the sample, at an angle of θ = 129° relative to the primary beam of ions with an energy of several kiloelectronvolts. Using the proposed low-energy ion backscattering spectroscopy (LEIBS) technique, it was found that the fraction of germanium clusters in the samples studied was ≤20%. The LEIBS method provides a several-fold decrease in the detection threshold for a cluster component in the semiconductor compound as compared to the traditional method based on the measurements of ion scattering at small angles.
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Original Russian Text © P.Yu. Babenko, A.P. Shergin, 2007, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 33, No. 9, pp. 37–43.
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Babenko, P.Y., Shergin, A.P. Cluster diagnostics in Si1−x Ge x solid solutions using low-energy ion backscattering spectroscopy. Tech. Phys. Lett. 33, 377–379 (2007). https://doi.org/10.1134/S1063785007050057
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DOI: https://doi.org/10.1134/S1063785007050057