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Extrinsic conduction in Ge28.5Pb15S56.5 and Ge27Pb17Se56 glassy semiconductors

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Abstract

Pure and iron-doped Ge28.5Pb15S56.5 and Ge27Pb17Se56 glassy semiconductors have been studied by a combination of methods including Mössbauer spectroscopy, optical absorption spectroscopy, and measurements of the temperature dependence of the dc conductivity. The results of measurements show that Fe atoms form donor levels in the mobility gap of semiconductors and produce a dopant-concentration-dependent shift of the Fermi level.

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References

  1. Electron Phenomena in Chalcogenide Glassy Semiconductors, Ed. by K. D. Tsendin (Nauka, St. Petersburg, 1996), pp. 34–113 [in Russian].

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  2. P. P. Seregin and A. A. Andreev, in Mössbauer Spectroscopy of Frozen Solutions, Ed. by A. Vértes and D.L. Nagy (Akadémiai Kiadó, Budapest, 1990).

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Authors and Affiliations

  1. State Pedagogical University, St. Petersburg, Russia

    G. A. Bordovskiĭ, R. A. Castro & E. I. Terukov

  2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia

    G. A. Bordovskiĭ, R. A. Castro & E. I. Terukov

Authors
  1. G. A. Bordovskiĭ
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  2. R. A. Castro
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  3. E. I. Terukov
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Original Russian Text © G.A. Bordovskiĭ, R.A. Castro, E.I. Terukov, 2006, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 32, No. 21, pp. 1–6.

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Bordovskiĭ, G.A., Castro, R.A. & Terukov, E.I. Extrinsic conduction in Ge28.5Pb15S56.5 and Ge27Pb17Se56 glassy semiconductors. Tech. Phys. Lett. 32, 913–915 (2006). https://doi.org/10.1134/S1063785006110010

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  • DOI: https://doi.org/10.1134/S1063785006110010

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