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Thermal boundary resistance of a granular film-substrate interface

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Abstract

The results of measurements of the thermal boundary resistance (R FS) of the interface between a one-layer granular film on a substrate are presented, which reveal the relationship between the R FS value and the grain size in the film material. For a 10-nm-thick nanocrystalline (Fe0.5Co0.5)0.4Cu0.6 film deposited on a silicon substrate with a 50-nm-thick SiO2 oxide layer (interlayer), R FS is increased by almost two orders of magnitude compared to the minimum reported value (10−7 (m2 K)/W). The thermal boundary resistance of a La0.65Ca0.35MnO3 film with a microcrystalline structure, which was deposited over a YBa2Cu3O7−δ interlayer on a SrTiO3 substrate, is R FS = 10−6 (m2 K)/W.

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Original Russian Text © Yu.M. Nikolaenko, Yu.V. Medvedev, M. Ghafari, H. Hahn, I.N. Chukanova, 2006, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 32, No. 20, pp. 77–84.

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Nikolaenko, Y.M., Medvedev, Y.V., Ghafari, M. et al. Thermal boundary resistance of a granular film-substrate interface. Tech. Phys. Lett. 32, 904–907 (2006). https://doi.org/10.1134/S1063785006100269

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  • DOI: https://doi.org/10.1134/S1063785006100269

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