Abstract
The results of experiments on the synthesis of epitaxial B2-NiAl layers by means of nanosecond laser irradiation of sequentially deposited thin nickel and aluminum layers (Al/Ni bilayers) on a MgO(001) substrate surface are presented. Features of the phase formation under the laser action and during the combustion wave initiation are considered. The rapid formation of an epitaxial B2-NiAl layer is explained in terms of a martensitic-like mechanism of the transfer of reacting atoms via a layer of reaction products. It is suggested that this mechanism can compete with diffusion via grain boundaries and dislocation, thus explaining the ultrafast transfer of reacting atoms via a layer of reaction products for various methods of initiation of the solid-state synthesis.
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Original Russian Text © V.G. Myagkov, L.E. Bykova, G.N. Bondarenko, 2006, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 32, No. 19, pp. 5–12.
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Myagkov, V.G., Bykova, L.E. & Bondarenko, G.N. Epitaxial B2-NiAl layers formed by nanosecond laser irradiation of thin Al/Ni bilayers. Tech. Phys. Lett. 32, 827–830 (2006). https://doi.org/10.1134/S1063785006100026
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DOI: https://doi.org/10.1134/S1063785006100026