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Beryllium diffusion and influence on the luminescent and electrical properties of indium phosphide

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Abstract

The diffusion of beryllium in indium phosphide (InP) has been studied. The temperature dependence of the diffusion coefficient can be described by the formula D = 6.3 × 10−5exp(−1.4/kT) [cm2/s], which yields D = 1.07 × 10−11 cm2/s at T = 768°C. The results of measurements of the luminescence and electrical properties show that beryllium is a shallow acceptor with an activation energy of 0.03 ± 0.005 meV.

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Authors and Affiliations

  1. North-Caucasian Mining and Metallurgy Institute, State Technical University, Vladikavkaz, North Ossetia, Russia

    V. V. Agaev, S. G. Metreveli, S. P. Starosel’tseva & G. I. Yablochkina

  2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    I. N. Arsent’ev

Authors
  1. V. V. Agaev
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  2. I. N. Arsent’ev
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  3. S. G. Metreveli
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  4. S. P. Starosel’tseva
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  5. G. I. Yablochkina
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Original Russian Text © V.V. Agaev, I.N. Arsent’ev, S.G. Metreveli, S.P. Starosel’tseva, G.I. Yablochkina, 2006, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 32, No. 16, pp. 41–46.

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Agaev, V.V., Arsent’ev, I.N., Metreveli, S.G. et al. Beryllium diffusion and influence on the luminescent and electrical properties of indium phosphide. Tech. Phys. Lett. 32, 709–711 (2006). https://doi.org/10.1134/S1063785006080219

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  • DOI: https://doi.org/10.1134/S1063785006080219

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