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Relationship between quasi-threshold and thresholdless auger recombination processes in InAs/GaAs quantum dots

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Abstract

The principal mechanisms of the nonradiative (Auger) recombination of nonequilibrium charge carriers in semiconductor heterostructures with quantum dots (QDs) are considered. It is shown that the Auger recombination process in QDs can proceed, in addition to a threshold mechanism, by means of two other substantially different mechanisms—thresholdless and quasi-threshold—and either of these can predominate, depending on the QD size. For a QD radius of ∼30 Å, the probability of Auger recombination is comparable with that of radiative recombination.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. S. Shkolnik, V. P. Evtikhiev & G. G. Zegrya

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  1. A. S. Shkolnik
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  2. V. P. Evtikhiev
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  3. G. G. Zegrya
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Original Russian Text © A.S. Shkolnik, V.P. Evtikhiev, G.G. Zegrya, 2006, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 32, No. 15, pp. 51–59.

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Shkolnik, A.S., Evtikhiev, V.P. & Zegrya, G.G. Relationship between quasi-threshold and thresholdless auger recombination processes in InAs/GaAs quantum dots. Tech. Phys. Lett. 32, 670–673 (2006). https://doi.org/10.1134/S1063785006080104

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  • DOI: https://doi.org/10.1134/S1063785006080104

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